A new model of stacked transformers considering skin and substrate effects

Author

Qian Zhao ; Jun Liu ; Zhiping Yu ; Lingling Sun ; Hao Yu

Author_Institution

Key Lab. of RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A compact model for 1:1 stacked transformers fabricated in silicon IC technology has been developed. The skin and substrate effects are taken into account in the model. The model parameters are extracted from the layout and the process technology specifications. The proposed model is verified by measured S-parameters up to 40 GHz. The simulated S-parameters, quality factor Q, coil inductance and magnetic coupling coefficient, all show excellent agreement with measured data over the entire frequency range.

Keywords

S-parameters; coils; elemental semiconductors; integrated circuit layout; millimetre wave integrated circuits; silicon; transformers; S-parameter measurement; Si; coil inductance; layout extraction; magnetic coupling coefficient; process technology specification; quality factor; silicon IC technology; skin effect; stacked transformer; substrate effect; Coils; Couplings; Frequency measurement; Integrated circuit modeling; Layout; Metals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467680

Filename

6467680