Fast switching and small sized SOI-LTIGBT with shorted trench anode

In this paper a novel lateral trench insulated-gate bipolar transistor with shorted trench anode (STA -LTIGBT) on Silicon-on-insulator (SOI) is proposed and discussed. Its main features of the proposed structure are the deep oxide trench in drift region and the trench anode design. Hence the proposed structure could reduce drastically the total chip area not only in the drift region but also in anode region. Numerical simulation results indicate that the proposed STA -LTIGBT structure could suppress the snapback effect commendably. Furthermore, it is shown that the turnoff time of the proposed structure is decreased by 84% compared to that of the conventional LTIGBT, and by 70% compared to that of the deep trench LTIGBT.