DocumentCode
598369
Title
The characteristics of ZrO2 charge trapping layers by nitrogen incorporation in nonvolatile memory applications
Author
Chyuan-Haur Kao ; Chih-Ju Lin ; Hsin-Yuan Wang ; Szu-Chien Chen
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
3
Abstract
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
Keywords
electron traps; nitrogen; random-access storage; rapid thermal annealing; zirconium compounds; MOHOS type memory; ZrO2; charge loss; charge trapping layers; data retention; memory device performance; nonvolatile memory; rapid thermal annealing; temperature 900 degC; Annealing; Charge carrier processes; Films; Nitrogen; Rough surfaces; Surface roughness; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467750
Filename
6467750
Link To Document