• DocumentCode
    598401
  • Title

    Millimeter-wave and terahertz CMOS design

  • Author

    Fujishima, Minoru

  • Author_Institution
    Grad. Sch. of Frontier Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application, however, a short-millimeter-wave band (more than 100 GHz) is used since it can potentially provide a wider frequency band. Thus, we have studied D-band (110-170 GHz) CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the short-millimeter-wave band, since only an insufficient device model is provided, research has to start from device modeling. In this paper, our studies of modeling and design for D-band CMOS circuits are described. Finally, a 10 Gbps, 135 GHz wireless transceiver with a power consumption of 98 mW is demonstrated.
  • Keywords
    CMOS integrated circuits; high-speed integrated circuits; integrated circuit design; low-power electronics; millimetre wave integrated circuits; mobile radio; radio transceivers; D-band CMOS circuits; bandwidth 110 GHz to 170 GHz; bit rate 10 Gbit/s; frequency 135 GHz; insufficient device model; low power consumption; low-power ultrahigh-speed wireless communication; millimeter-wave CMOS design; mobile application; power 98 mW; power consumption; short-distance high-speed wireless communication; short-millimeter-wave band; terahertz CMOS design; wider frequency band; wireless transceiver; CMOS integrated circuits; Delay; Gain; Integrated circuit modeling; Receivers; Semiconductor device modeling; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467820
  • Filename
    6467820