Channel length-dependent parasitic bipolar transistor effect in Poly-Si TFTs considering traps at grain boundary

Author

Liu, Tony Chi ; Kuo, J.B. ; Shengdong Zhang

Author_Institution

Sch. of Inf. Eng., Peking Univ., Shenzhen, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

This paper reports channel length-dependent parasitic bipolar transistor (PBT) effect in Poly-Si TFTs considering traps at grain boundary. As verified by the experimentally measured data and simulation results, due to impact ionization (II), the PBT´s current gain is large when the channel length is small at a low drain bias; but independent of the channel length at a high drain bias. The trap density at grain boundary affects strongly the channel length-dependent floating-body effect of the poly-si TFTs.

Keywords

bipolar transistors; elemental semiconductors; grain boundaries; impact ionisation; silicon; thin film transistors; PBT; Si; channel length-dependent floating-body effect; channel length-dependent parasitic bipolar transistor effect; grain boundary trap density; impact ionization; polySi TFT; Bipolar transistors; Current measurement; Gain measurement; Grain boundaries; Integrated circuits; Simulation; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467845

Filename

6467845