A CIGS thin film solar cell with dual absorber layers

Author

Jian-Yuan Wang ; Jyi-Tsong Lin ; Yu-Sheng Kuo ; Ching-yao Pai ; Yi-Chuen Eng

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this work, we made a CIGS thin film solar cell with dual absorber layers which added an InGaP layer between buffer layer and CIGS layer. That is, the conventional structure of ZnO/CdS/CIGS/Mo becomes the structure of ZnO/CdS/InGaP/CIGS/Mo. And we translate the thickness and doping concentration of the additional InGaP absorber layer to find out critical parameter. Due to the presence of the additional 0.06 μm thick InGaP layer with acceptor concentration 2 × 10¹⁶ cm^-3, the increased efficiency is observed. According to simulations, the wavelength of EQE in 0.3 μm ~ 0.5 μm for our proposed CIGS solar cell is improved when compared with the conventional CIGS solar cell. And the conversion efficiency increased from 9.27% to 11.18%.

Keywords

II-VI semiconductors; III-V semiconductors; buffer layers; cadmium compounds; copper compounds; doping profiles; gallium compounds; indium compounds; molybdenum; semiconductor thin films; semiconductor-metal boundaries; solar cells; ternary semiconductors; thin film devices; zinc compounds; CIGS thin film solar cell; EQE wavelength; ZnO-CdS-InGaP-Cu(InGa)Se₂-Mo; acceptor concentration; buffer layer; conversion efficiency; doping concentration; dual absorber layer; Buffer layers; Current density; Doping; Fabrication; Photonic band gap; Photovoltaic cells; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467849

Filename

6467849