• DocumentCode
    598443
  • Title

    12 GHz monolithic double-balanced down converter in 65 nm CMOS

  • Author

    Rui Guan ; Tingting Mo ; Dongpo Chen ; Xiaoyong Li

  • Author_Institution
    Center for Analog/RF Integrated Circuits (CARFIC), Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents a 12 GHz monolithic double-balanced down conversion mixer with IF buffer in a 65 nm CMOS technology. The mixer down converts the input signal at 12 GHz to IF frequency and together with the IF buffer achieves a conversion gain of 27.5 dB with ±0.6 dB variation across over 1 GHz band. The simulated in-band noise figure (NF) is about 14.6 dB and the in-band output third-order intercept point (OIP3) is about 6 dBm. The proposed down converter consumes 16 mA from a 1.2 V supply voltage. The die area of the whole circuit is only 0.2×0.22 mm2.
  • Keywords
    CMOS integrated circuits; buffer circuits; convertors; mixers (circuits); monolithic integrated circuits; CMOS technology; IF buffer; NF; OIP3; current 16 mA; frequency 12 GHz; gain -6 dB to 6 dB; in-band noise figure; in-band output third-order intercept point; mixer; monolithic double-balanced down converter; size 65 nm; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Mixers; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467909
  • Filename
    6467909