DocumentCode :
598746
Title :
A method for low-K dielectric breakdown physical localization
Author :
Chery, E. ; Federspiel, Xavier ; Beylier, G. ; Volpi, F. ; Chaix, J.
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
119
Lastpage :
121
Abstract :
This paper reports results obtained on a new test structure developed to easily locate low-k dielectric breakdown spots. This spot can be localized by using a comb-serpentine test structure, and by monitoring the change in resistance between pads.
Keywords :
electric breakdown; low-k dielectric thin films; comb-serpentine test structure; low-k dielectric breakdown physical localization method; low-k dielectric breakdown spot location; Dielectrics; Electric breakdown; Metals; Reliability; Resistance; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468934
Filename :
6468934
Link To Document :
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