• DocumentCode
    598764
  • Title

    Noise coupling analysis between TSV and active circuit

  • Author

    Manho Lee ; Jonghyun Cho ; Joungho Kim

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
  • fYear
    2012
  • fDate
    9-11 Dec. 2012
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    This paper investigates about the noise coupling between signal TSV and active circuit in frequency domain using 3D EM solver. Because the active circuits and TSV are generally surrounded by deep N-well and substrate ties, some parameters related to dimension parameters of those are varied to clarify the tendency, and the results are explained qualitatively. After that, using S-parameter, simple MOS application is simulated in time domain simulation.
  • Keywords
    S-parameters; active networks; frequency-domain analysis; three-dimensional integrated circuits; time-domain analysis; 3D EM solver; MOS application; S-parameter; active circuit; deep N-well; dimension parameters; frequency domain; noise coupling analysis; signal TSV; substrate ties; time domain simulation; Active circuits; Capacitance; Couplings; Noise; Substrates; Through-silicon vias; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4673-1444-2
  • Electronic_ISBN
    978-1-4673-1445-9
  • Type

    conf

  • DOI
    10.1109/EDAPS.2012.6469428
  • Filename
    6469428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=598764