ANFIS-based approach to study the subthreshold swing behavior for nanoscale DG MOSFETs including the interface trap effect

Since the DG MOSFET performance at nanoscale level is highly affected by geometrical parameters such as the channel length, reliable models which describe the ageing degradation of the device should be developed. The accurate description of this degradation is a need to estimate the device lifetime. In this work, a new model to predict the relative degradation of subthreshold swing factor is developed using the Adaptive Network Fuzzy Inference System (ANFIS) approach. The obtained results are discussed in order to get more information about the device degradation mechanism. The found results show good agreement with the numerical simulations (2D-ATLAS) making the proposed approach an efficient alternative approach to study the CMOS-based circuits degradation behavior.