Temperature effects on subthreshold current of pocket implanted nano scale n-MOSFET

Author

Bhuyan, Monowar H. ; Ferdous, F. ; Khosru, Quazi D. M.

Author_Institution

Dept. of Electr. & Electron. Eng., Green Univ. of Bangladesh, Dhaka, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

686

Lastpage

689

Abstract

Temperature fluctuations affect threshold voltage, carrier mobility and transit time of an n-MOSFET. This phenomenon induces the variations of drain current in the device. This paper presents an analytical model of the temperature effects of subthreshold drain current of pocket implanted n-MOSFET. The model has also been used to study the device behavior at low and high ambient temperatures. The model includes the effects of temperature on the threshold voltage, the carrier mobility and hence on the subthreshold drain current for nano scale pocket implanted n-MOSFET.

Keywords

MOSFET; carrier mobility; analytical model; carrier mobility; device behavior; high ambient temperatures; low ambient temperatures; pocket implanted nanoscale n-MOSFET; subthreshold drain current; temperature effects; temperature fluctuations; threshold voltage; transit time; Logic gates; MOSFET circuits; Mathematical model; Subthreshold current; Temperature; Temperature dependence; Temperature effects; carrier mobility; pocket implanted n-MOSFET; subthreshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471643

Filename

6471643