A comparative study of potential distribution of a thin film SOI p-channel four gate transistor

Author

Haq, A. F. M. Saniul ; Noor, Samantha Lubaba ; Hassan, Mehdi ; Islam, Md Shariful ; Debnath, Bishwajit ; Khan, M. Ziaur Rahman

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

818

Lastpage

821

Abstract

A comparative study of two different analytical models of accumulation-mode SOI p-channel G⁴-FET has been reported and accuracy of the models has been observed under different parametric variation and biasing conditions. A numerical model is developed by Silvaco/ATLAS 3-D simulator which incorporates various non ideal effects like concentration dependant mobility, Shockley-Read-Hall recombination, Auger recombination and bandgap narrowing effect. The accuracy of the analytical models are tested by the numerical model. The performance of varying different parameters like length, width, silicon thickness and gate biasing is also observed between lateral junction gates and between top and bottom gates.

Keywords

field effect transistors; numerical analysis; semiconductor thin films; Auger recombination; SOI p channel G4 FET; Shockley Read Hall recombination; Silvaco/ATLAS 3D simulator; analytical models; bandgap narrowing effect; biasing conditions; concentration dependant mobility; gate biasing; lateral junction gates; numerical model; parametric variation; silicon thickness; thin film SOI p channel four gate transistor; Logic gates; Numerical models; Four Gate Transistor; Potential distribution; SOI technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471676

Filename

6471676