Title :
Designing single GaAs nanowire lasers
Author :
Saxena, D. ; Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).
Keywords :
III-V semiconductors; carrier density; gallium arsenide; nanowires; optical pumping; semiconductor lasers; semiconductor quantum wires; GaAs; carrier density; laser power; material gain; microscopic gain model; nanowire diameter; nanowire guided modes; nanowire lasers; nanowire length; optical pumping; optimal structures; threshold gain; Charge carrier density; Gallium arsenide; Laser modes; Laser theory; Optical pumping; Pump lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472380
