DocumentCode
599875
Title
Resistive switching in high-k dielectrics for non-volatile memory applications
Author
Elliman, Robert Glen ; Saleh, M.N. ; Venkatachalam, Dinesh Kumar ; Kim, T. ; Belay, Kidane ; Karouta, F.
Author_Institution
Electron. Mater. Eng. Dept., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
121
Lastpage
122
Abstract
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
Keywords
high-k dielectric thin films; metals; random-access storage; ReRAM; film microstructure; high-k dielectrics; metal-bridge memory; nonvolatile memory; nonvolatile resistive random access memory; resistive switching; switching characteristics; transition metal oxide; Annealing; Educational institutions; Films; Hafnium compounds; Switches; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472390
Filename
6472390
Link To Document