• DocumentCode
    599882
  • Title

    Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

  • Author

    Sajewicz, P. ; Fu, L. ; Tan, H.H. ; Vora, K. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; quantum well lasers; titanium compounds; InGaAs-GaAs; TiO2; dielectric capping layer; monolithic integration; monolithically integrated multisection semiconductor laser; passive waveguide sections; quantum well laser structure; selective area quantum well intermixing; thermal interdiffusion; uncapped regions; Indium gallium arsenide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472398
  • Filename
    6472398
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599882