DocumentCode
599883
Title
Optoelectronic properties of GaAs nanowire photodetector
Author
Wang, Huifang ; Parkinson, P. ; Tian, J. ; Saxena, D. ; Mokkapati, S. ; Gao, Q. ; Prasai, P. ; Fu, L. ; Karouta, F. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
139
Lastpage
140
Abstract
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; nanowires; optoelectronic devices; photodetectors; Schottky diode; nanowire photodetector; optoelectronic properties; photocurrent; spectral response; Gallium arsenide; Laser excitation; Metals; Photoconductivity; Photodetectors; Power lasers; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472399
Filename
6472399
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