Title :
Fabrication and investigation of Nitrogen doped ultra-nano-crystalline diamond Hall-bar devices
Author :
Eikenberg, N. ; Ganesan, Kavita ; Lee, Kin Keung ; Edmonds, Michael J.S. ; Willems van Beveren, L.H. ; Prawer, S.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices´ electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
Keywords :
Hall effect devices; cryogenic electronics; diamond; etching; nitrogen; photolithography; plasma CVD; silicon; C:N; CVD; N-UNCD; cryogen-free dilution refrigerator; device electrical property; dry-etching technique; fabrication; microwave-assisted plasma chemical vapour deposition; nitrogen doped ultra-nano-crystalline diamond Hall-bar device; nonconducting diamond layer; optical lithography; silicon wafer; temperature; Conductivity; Diamonds; Integrated optics; Nitrogen; Optical device fabrication; Plasma temperature; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472415
