• DocumentCode
    599900
  • Title

    Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate

  • Author

    Lee, Kin Keung ; Shiell, T. ; McCallum, J.C. ; Szymanski, R. ; Soncini, A. ; Boskovic, C. ; Jamieson, David N.

  • Author_Institution
    Centre for Quantum Comput. & Commun. Technol., Univ. of Melbourne, Melbourne, VIC, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.
  • Keywords
    Raman spectra; adsorbed layers; annealing; graphene; ion implantation; metallic thin films; nickel; vacancies (crystal); Ni:C; carbon implantation; carbon ions; few-layered graphene growth; microRaman measurements; nickel films; polycrystalline nickel substrate; sp3 adsorbates; temperature 950 degC; vacancies-defects; vacuum annealing; Carbon; Educational institutions; Films; Graphene; Nickel; Quantum computing; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472416
  • Filename
    6472416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599900