DocumentCode :
599910
Title :
Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene (TESADT) organic transistors?
Author :
Lyttleton, R. ; Muhieddine, K. ; Anthony, J.E. ; Micolich, A.P.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
193
Lastpage :
194
Abstract :
Solvent annealing is a wellknown method for crystallization of the TESADT semiconductor film in organic transistors. We show that although thermal annealing is also effective in producing crystallization, it compromises the resulting electrical performance.
Keywords :
annealing; crystallisation; organic compounds; organic field effect transistors; TESADT; crystallization; electrical performance; organic transistors; semiconductor film; solvent annealing; thermal annealing; triethylsilylethynyl anthradithiophene; Annealing; Crystallization; Films; Solvents; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472426
Filename :
6472426
Link To Document :
بازگشت