Large-scale assembly of single-walled carbon nanotube field effect transistor

Author

Ke Xu ; Chengdong Wu ; Xiaojun Tian ; Haibo Yu ; Zaili Dong

Author_Institution

State Key Lab. of Robot., Shenyang Inst. of Autom., Shenyang, China

fYear

2012

fDate

Aug. 29 2012-Sept. 1 2012

Firstpage

312

Lastpage

315

Abstract

This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.

Keywords

carbon nanotube field effect transistors; carbon nanotubes; electrophoresis; nanofabrication; C; assembly method; dielectrophoresis principle; floating potential; large-scale assembly; nanodevice; single-walled carbon nanotube field effect transistor; Assembly; Carbon nanotubes; Electric potential; Electrodes; Field effect transistors; Materials; Nanoscale devices; SWCNT FET; assembly; dielectrophoresis; floating potential; large-scale;

fLanguage

English

Publisher

ieee

Conference_Titel

Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on

Conference_Location

Shaanxi

Print_ISBN

978-1-4673-4588-0

Electronic_ISBN

978-1-4673-4589-7

Type

conf

DOI

10.1109/3M-NANO.2012.6472967

Filename

6472967