Title :
Towards simple methods for mass production of suspended graphene
Author :
Al-Mumen, Haider ; Fubo Rao ; Lixin Dong ; Wen Li
Author_Institution :
Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
Aug. 29 2012-Sept. 1 2012
Abstract :
This paper reports simple fabrication approaches that can be used to generate a suspended graphene sheet with the desired thickness, while eliminating the need for a crytical point dryer. Two methods have been developed to achieve a large suspended area of graphenes. In the first approach, SF6 plasma was used to make holes or channels with specific dimensions. Then micromechanical exfoliation was applied to deposit the graphene sheet suspended over these channels or holes. In the second method, we used SF6 plasma to make suspended graphenes by undercutting planar graphenes. To tune the number of graphene layers, thick graphene samples was etched layer by layer until the desired thickness was obtained. Additionally, the effect of using various plasmas etching (SF6 or O2) on the layer-by-layer graphene removal has been studied. Raman spectra of plasma-treated graphenes have shown higher amount of defects in case of SF6, specially for thin graphene sheet. However, these surface defects could be recovered by annealing the samples in an argon environment at about 1000 °C.
Keywords :
Raman spectra; annealing; cutting; graphene; plasma materials processing; sputter etching; C; Raman spectra; annealing; argon environment; fabrication approaches; graphene layer number; graphene suspended area; layer-by-layer graphene removal; mass production; micromechanical exfoliation; planar graphenes; plasma etching effect; plasma-treated graphenes; surface defects; suspended graphene sheet; thin graphene sheet; undercutting; Annealing; Etching; Graphene; Plasmas; Substrates; Sulfur hexafluoride; graphene; layer-by-layer removal; plasma; suspended graphene;
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
Conference_Location :
Shaanxi
Print_ISBN :
978-1-4673-4588-0
Electronic_ISBN :
978-1-4673-4589-7
DOI :
10.1109/3M-NANO.2012.6472978