Analysis of the effects of coupling through substrate and the calculus of the Q factor

Author

Rios, E.T. ; Garcia, S.C.S. ; Moreira, L.C. ; Torres, R.T. ; Van Noije, W.A.M.

Author_Institution

Univ. Popular Autonoma del Estado de Puebla, Puebla, Mexico

fYear

2013

fDate

Feb. 27 2013-March 1 2013

Firstpage

1

Lastpage

4

Abstract

A comparison of Y-parameters and S-parameters methodologies for the calculus of the quality factor (Q) in integrated inductors, is analyzed in this paper. For this reason two inductors are compared, one with low (planar inductor) and another with high (cross inductor) electric field coupling effects, in order to determine its influence on the Q calculus. The experimental results shows that assumptions made in Y-parameters Q calculus methodology can overestimate it value. The analysis was done over a 0.35μm CMOS technology using S-parameter measurements up to 10 GHz.

Keywords

CMOS integrated circuits; Q-factor; S-parameters; inductors; CMOS technology; Q factor calculus; S-parameter methodology; Y-parameter methodology; coupling effect analysis; cross inductor; high-electric field coupling effect; integrated inductors; low-electric field coupling effect; planar inductor; quality factor; size 0.35 mum; Calculus; Couplings; Inductance; Inductors; Q-factor; Scattering parameters; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on

Conference_Location

Cusco

Print_ISBN

978-1-4673-4897-3

Type

conf

DOI

10.1109/LASCAS.2013.6519070

Filename

6519070