DocumentCode :
601100
Title :
Inductor characterization in RF LC-VCOs
Author :
Doldan, R. ; Gines, A.J. ; Rueda, Andrea
Author_Institution :
Inst. de Microelectron. de Sevilla, Univ. of Seville, Seville, Spain
fYear :
2013
fDate :
Feb. 27 2013-March 1 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper analyzes the characterization of inductors in resonant radio frequency (RF) circuits, with emphasis in LC voltage-controlled oscillators (VCOs). We will demonstrate how inductor quality factor is often underestimated in the vicinity of self-resonance frequency, because its capacitive parasitic contribution is not properly considered. In consequence, some valid inductor geometries could be incorrectly discarded during the initial circuit optimization process. To overcome this design space limitation, the paper presents an alternative method to characterize inductors at the wanted resonant frequency. The comparison between the conventional and the proposed methods is illustrated with the characterization of a complete inductor library in a commercial 90nm CMOS RF technology.
Keywords :
CMOS analogue integrated circuits; LC circuits; Q-factor; circuit optimisation; inductors; radiofrequency oscillators; voltage-controlled oscillators; CMOS RF technology; LC voltage-controlled oscillators; RF LC-VCO; capacitive parasitic contribution; circuit optimization process; design space limitation; inductor characterization; inductor geometries; inductor library; inductor quality factor; resonant RF circuits; resonant radio frequency circuits; self-resonance frequency; size 90 nm; CMOS integrated circuits; Inductors; Q-factor; RLC circuits; Radio frequency; Resonant frequency; Voltage-controlled oscillators; LC-VCO; RF; VCO design and optimization; quality factor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
Conference_Location :
Cusco
Print_ISBN :
978-1-4673-4897-3
Type :
conf
DOI :
10.1109/LASCAS.2013.6519088
Filename :
6519088
Link To Document :
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