Parameter extraction procedure for a physics-based power SiC Schottky diode model

A detailed parameter extraction procedure for a simple physics-based power SiC Schottky diode model is presented. The developed procedure includes the extraction of doping concentration, active area and thickness of drift region, which are needed in the power Schottky diode model. The main advantage is that the developed procedure does not require any knowledge of device fabrication, which is usually not available to circuit designers. The only measurements required for the parameter extraction are a simple static I-V characterization and C-V measurements. Furthermore, the physics-based SiC Schottky diode model whose parameters are extracted by the proposed procedure includes temperature dependencies and is generally applicable to SiC Schottky diodes. The procedure is demonstrated for four Schottky diodes from two different manufacturers having the following ratings: 600V/50A, 1.2kV/3A, 1.2kV/7A, and 1.2kV/20A.