Improvement of GaN transistors working conditions to increase efficiency Of A 100W DC-DC converter

GaN transistors can be used instead of Si MOSFET, because they improve static and dynamic performances. Moreover, low power DC-DC converters are often not very efficient, so GaN represents a good solution to improve efficiency. This article presents a comparison between Si MOSFET and GaN HEMT performances by using them in a high frequency isolated DC-DC converter. The structure and his control are described, and the maximum efficiency is higher than 94%. After having highlighted critical points for efficiency, a way to improve working conditions of GaN transistors is investigated. The converter is based on EPC GaN components.