DocumentCode
601597
Title
Advantages of paralleling inductors-on-silicon in high frequency power converters
Author
Feeney, Ciaran ; Duffy, Maeve ; Ningning Wang ; O´Mathuna, Cian
Author_Institution
Power Electron. Res. Centre, Nat. Univ. of Ireland, Galway, Ireland
fYear
2013
fDate
17-21 March 2013
Firstpage
686
Lastpage
691
Abstract
In general power supplies are moving towards higher switching frequencies to reduce the size of passive components; the ultimate goal is to facilitate the integration of active and passive components on a single silicon chip providing a Power Supply on Chip (PSoC). The purpose of this work is to show that distributing inductors-on-silicon in parallel can increase the output current and reduce losses while also maintaining the same overall footprint area and the same effective inductance as a single micro-inductor. The performance of distributed micro-inductors is compared in a range of parallel micro-inductor configurations to show which configuration provides the best overall performance in terms of circuit size, conversion efficiency and power handling. For that purpose, detailed analysis of the performance of all power components (inductors and MOSFETs) is carried out.
Keywords
elemental semiconductors; inductors; losses; passive networks; power MOSFET; power supply circuits; silicon; switching convertors; MOSFET; PSoC; Si; active components; high frequency power converter; loss; paralleling inductors-on-silicon; passive component; power handling; power supply on chip; single distributed microinductor configuration; size reduction; switching frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location
Long Beach, CA
ISSN
1048-2334
Print_ISBN
978-1-4673-4354-1
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2013.6520284
Filename
6520284
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