Performance evaluation of various semiconductor technologies for automotive applications

Author

Shamsi, Pourya ; McDonough, Matthew ; Ranjbar, A.H. ; Fahimi, B.

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Dallas, Dallas, TX, USA

fYear

2013

fDate

17-21 March 2013

Firstpage

3061

Lastpage

3066

Abstract

This paper evaluates the commercially available semiconductor switches for automotive applications. For this purpose, a conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with a Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Performance criteria for automotive drive systems are compared between the two switches. Electromagnetic interferences due to the switching times of the switches are studied. A test is performed to measure the actual power losses for both switches. Using the simulated model of the heatsink, the temperature of the junction for each switch is estimated. Afterwards, the results are compared with the data provided in the technical documents of the switches.

Keywords

MOSFET; automotive electronics; heat sinks; insulated gate bipolar transistors; semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; IGBT; MOSFET; Si; SiC; automotive drive systems; automotive electronics; electromagnetic interferences; heat sink; insulated gate bipolar transistor; metal oxide semiconductor field effect transistor; performance evaluation; power losses; semiconductor switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE

Conference_Location

Long Beach, CA

ISSN

1048-2334

Print_ISBN

978-1-4673-4354-1

Electronic_ISBN

1048-2334

Type

conf

DOI

10.1109/APEC.2013.6520736

Filename

6520736