Title :
Performance evaluation of various semiconductor technologies for automotive applications
Author :
Shamsi, Pourya ; McDonough, Matthew ; Ranjbar, A.H. ; Fahimi, B.
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Dallas, TX, USA
Abstract :
This paper evaluates the commercially available semiconductor switches for automotive applications. For this purpose, a conventional Silicon (Si) Insulated Gate Bipolar Transistor (IGBT) is compared with a Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Performance criteria for automotive drive systems are compared between the two switches. Electromagnetic interferences due to the switching times of the switches are studied. A test is performed to measure the actual power losses for both switches. Using the simulated model of the heatsink, the temperature of the junction for each switch is estimated. Afterwards, the results are compared with the data provided in the technical documents of the switches.
Keywords :
MOSFET; automotive electronics; heat sinks; insulated gate bipolar transistors; semiconductor switches; silicon; silicon compounds; wide band gap semiconductors; IGBT; MOSFET; Si; SiC; automotive drive systems; automotive electronics; electromagnetic interferences; heat sink; insulated gate bipolar transistor; metal oxide semiconductor field effect transistor; performance evaluation; power losses; semiconductor switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520736
