• DocumentCode
    602918
  • Title

    Cost-driven 3D design optimization with metal layer reduction technique

  • Author

    Qiaosha Zou ; Jing Xie ; Yuan Xie

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2013
  • fDate
    4-6 March 2013
  • Firstpage
    294
  • Lastpage
    299
  • Abstract
    Three-dimensional integrated circuit (3D IC) is a promising solution to continue the performance scaling. However, the fabrication cost for 3D ICs can be a major concern for the adoption of this emerging technology. In this paper, we study the cost implication for both TSV-based and interposer-based 3D ICs, with the observation that many long metal interconnects in 2D designs are replaced by TSVs in 3D designs, and therefore the number of metal layers to satisfy routing requirements can be reduced, resulting in cost saving in 3D ICs. Based on our cost model, we propose a cost-driven 3D design space optimization flow that balances the design area and metal layer requirement, by optimizing the cost tradeoffs between silicon area and the number of metal layers. With the cost-driven design optimization flow, we can achieve cost saving up to 19% for TSV-based 3D designs, and 26% for interposer-based 3D designs, respectively, compared to the baseline designs.
  • Keywords
    circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit interconnections; network routing; silicon; three-dimensional integrated circuits; 2D design; Si; TSV-based 3D IC design; cost model; cost saving; cost tradeoff; cost-driven 3D design space optimization flow; fabrication cost; interposer-based 3D IC; long metal interconnects; metal layer reduction technique; performance scaling; routing requirement; three-dimensional integrated circuit; Bonding; Logic gates; Metals; Routing; Stacking; Three-dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2013 14th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-4951-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2013.6523625
  • Filename
    6523625