DocumentCode
602918
Title
Cost-driven 3D design optimization with metal layer reduction technique
Author
Qiaosha Zou ; Jing Xie ; Yuan Xie
Author_Institution
Pennsylvania State Univ., University Park, PA, USA
fYear
2013
fDate
4-6 March 2013
Firstpage
294
Lastpage
299
Abstract
Three-dimensional integrated circuit (3D IC) is a promising solution to continue the performance scaling. However, the fabrication cost for 3D ICs can be a major concern for the adoption of this emerging technology. In this paper, we study the cost implication for both TSV-based and interposer-based 3D ICs, with the observation that many long metal interconnects in 2D designs are replaced by TSVs in 3D designs, and therefore the number of metal layers to satisfy routing requirements can be reduced, resulting in cost saving in 3D ICs. Based on our cost model, we propose a cost-driven 3D design space optimization flow that balances the design area and metal layer requirement, by optimizing the cost tradeoffs between silicon area and the number of metal layers. With the cost-driven design optimization flow, we can achieve cost saving up to 19% for TSV-based 3D designs, and 26% for interposer-based 3D designs, respectively, compared to the baseline designs.
Keywords
circuit optimisation; elemental semiconductors; integrated circuit design; integrated circuit interconnections; network routing; silicon; three-dimensional integrated circuits; 2D design; Si; TSV-based 3D IC design; cost model; cost saving; cost tradeoff; cost-driven 3D design space optimization flow; fabrication cost; interposer-based 3D IC; long metal interconnects; metal layer reduction technique; performance scaling; routing requirement; three-dimensional integrated circuit; Bonding; Logic gates; Metals; Routing; Stacking; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-4673-4951-2
Type
conf
DOI
10.1109/ISQED.2013.6523625
Filename
6523625
Link To Document