A low-noise amplifier design for 3.1–10.6 GHz impulse radio ultra wideband receivers

Author

Adsul, A.P. ; Bodhe, S.K.

Author_Institution

NMIMS, Mumbai, India

fYear

2013

fDate

22-23 March 2013

Firstpage

470

Lastpage

474

Abstract

In this paper the LNA is designed to amplify the radio-signals received in the UWB band (3.1-10.6 GHz) with a good signal-to-noise ratio property, high and flat power gain, good input impedance matching and good phase linearity. The 0.4 μm CMOS technology is used for implementation. A detailed designed is carried for the LNA and is simulated on ADS. The simulation results demonstrate that the gain is flat over the band of interest and is of the order of 12 dB. The noise figure of the designed LNA is good and is in the range of 3.35 to 2.8 dB. The most important achievement is the linearity which is decided by group delay and this implementation achieves group delay variations in the range of ± 12.175 ps.

Keywords

CMOS integrated circuits; delays; impedance matching; low noise amplifiers; radio receivers; ultra wideband communication; ADS; CMOS technology; LNA; UWB band; flat power gain; frequency 3.1 GHz to 10.6 GHz; group delay; impulse radio ultra wideband receivers; input impedance matching; low-noise amplifier design; noise figure; phase linearity; radio-signals; signal-to-noise ratio property; CMOS integrated circuits; Delays; Gain; Low-noise amplifiers; Noise; Noise figure; Ultra wideband technology; Low noise amplifier (LNA); Ultra-wideband (UWB); noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Automation, Computing, Communication, Control and Compressed Sensing (iMac4s), 2013 International Multi-Conference on

Conference_Location

Kottayam

Print_ISBN

978-1-4673-5089-1

Type

conf

DOI

10.1109/iMac4s.2013.6526457

Filename

6526457