Analysis of drain current in short channel drain-extended triple gate FinFETs

Author

Soman, Sumit ; Nirmal, D. ; Nair, P.P. ; Ramya, M.S.A. ; Jeba, I.K.

Author_Institution

Dept. of Electron. & Commun. Eng., Karunya Univ., Coimbatore, India

fYear

2013

fDate

22-23 March 2013

Firstpage

494

Lastpage

497

Abstract

A short channel drain-extended triple gate fin shaped field effect transistor (finFET) is designed and simulated and its various performance parameters has been analyzed using Sentaurus TCAD tools. Drain-extended triple gate finFET has better hot carrier reliability which results in increased ON current and suppressed OFF current. The maximum ON current of the proposed device is found to be 2.37×10^-5 A/μm at V_GS =0.4 V and maximum OFF current is found to be 1.108×10^-11 A/μm and hence an excellent ON/OFF ratio is achieved.

Keywords

MOSFET; semiconductor device reliability; technology CAD (electronics); Sentaurus TCAD tools; drain current analysis; hot carrier reliability; increased ON current; short channel drain- extended triple gate FinFET; short channel drain-extended triple gate fin shaped field effect transistor; suppressed OFF current; voltage 0.4 V; FinFETs; Leakage currents; Logic gates; Performance evaluation; Substrates; Threshold voltage; ON/OFF ratio; Triple gate (TG) finFET; drain current; drain-extended triple gate finFET; high-k dielectric; hot carrier reliability; short channel effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Automation, Computing, Communication, Control and Compressed Sensing (iMac4s), 2013 International Multi-Conference on

Conference_Location

Kottayam

Print_ISBN

978-1-4673-5089-1

Type

conf

DOI

10.1109/iMac4s.2013.6526463

Filename

6526463