• DocumentCode
    60497
  • Title

    Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

  • Author

    Haran, Avner ; Barak, Joseph ; David, David ; Keren, Eitan ; Refaeli, Nati ; Rapaport, Shimshon

  • Author_Institution
    Soreq NRC, Yavne, Israel
  • Volume
    61
  • Issue
    5
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2702
  • Lastpage
    2710
  • Abstract
    Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.
  • Keywords
    SRAM chips; ion beam effects; SRAM; gate oxide; heavy ion irradiation; microdose effect; single-event hard errors; static random-access memories; Annealing; Ions; Logic gates; Radiation effects; SDRAM; Transistors; Angular dependence; charge yield; microdose; radiation induced leakage current (RILC); single-event hard error (SHE); soft breakdown (SBD); stuck bits;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2345697
  • Filename
    6894241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=60497