Development of a new package for next generation power semiconductor devices: Toward high temperature and high voltage applications

This paper deals with I-V characteristics of SiC-SBD and rectifying capabilities of four SiC-SBD using a new package under the temperature up to 300°C. As regards of the I-V characteristics, as the temperature increases, the threshold voltage decreases and the reverse current increases dramatically. This increase of the reverse current of the diodes under study leads to the limitation of the rectifying characteristics of the proposed packaging. This study demonstrates the ability of the later to be used in a harsh environment ones the components problems will have been solved.