DocumentCode
606134
Title
An ultra low power ultra low voltage LNA design using forward body biasing technique
Author
Baishnab, K.L. ; Jain, Amit ; Basak, Debajit
Author_Institution
Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, India 788010
fYear
2013
fDate
20-21 March 2013
Firstpage
953
Lastpage
958
Abstract
In this paper we present the design and analysis of a fully integrated CMOS low noise amplifier (LNA) in .18 um CMOS technology with operating frequency of 2.4 GHz. Employing a Forward body biasing scheme with cascode configuration ultralow power consumption of 0.15 mW is obtained with an ultra low supply voltage of 0.5 V. The effect of the output matching network on stability has been shown by using high frequency analysis of the designed LNA. The amplifier provides a forward gain (S21 ) of 11dB with a noise figure of only 3dB. The designed circuit is highly stable with a stern stability factor of 2.2. The stability of the designed LNA is also being analyzed by stability circles. Using a figure of merit that contains the effect of amplifier noise figure, gain, linearity, DC power consumption and operating frequency, we have shown that this amplifier is superior to conventional CMOS LNA designs reported in the literature.
Keywords
CMOS integrated circuits; CMOS technology; Logic gates; Transistors; CMOS; Forward Body Bias; Low Noise Amplifier(LNA); Low power; Low voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits, Power and Computing Technologies (ICCPCT), 2013 International Conference on
Conference_Location
Nagercoil
Print_ISBN
978-1-4673-4921-5
Type
conf
DOI
10.1109/ICCPCT.2013.6528890
Filename
6528890
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