• DocumentCode
    60770
  • Title

    A Decision-Error-Tolerant 45 nm CMOS 7b 1 GS/s Nonbinary 2b/Cycle SAR ADC

  • Author

    Hyeok-Ki Hong ; Wan Kim ; Hyun-Wook Kang ; Sun-Jae Park ; Choi, Michael ; Ho-Jin Park ; Seung-Tak Ryu

  • Author_Institution
    Dept. of Electr. Eng., KAIST, Daejeon, South Korea
  • Volume
    50
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    543
  • Lastpage
    555
  • Abstract
    A compact decision-error-tolerant 2b/cycle SAR ADC architecture is presented. Two DACs with different designated functions, SIG-DAC and REF-DAC, are implemented to make the structure compact and to eliminate the sampling skew issue. Use of a nonbinary decision scheme with decision redundancies not only increases the ADC speed with a relaxed DAC settling requirement but also makes the performance robust to reference fluctuations and comparator offset variations. The proposed dynamic register and direct DAC control scheme enhance the conversion speed by minimizing logic delay in the SAR decision loop. The proposed comparator-error detection with digital error correction scheme enhances high-speed ADC performance. A prototype 7b ADC fabricated in a 45 nm CMOS process operates at a sampling rate of 1 GS/s under a 1.25 V supply while achieving a peak SNDR of 41.6 dB and maintaining an ENOB higher than 6 up to 1.3 GHz signal frequency. The FoM under a 1.25 V supply is an 80 fJ/conversion-step with a power consumption of 7.2 mW.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; comparators (circuits); digital-analogue conversion; error correction; low-power electronics; REF-DAC; SAR decision loop; SIG-DAC; comparator offset variations; comparator-error detection; decision redundancy; decision-error-tolerant CMOS; digital error correction; direct DAC control; dynamic register; high-speed ADC performance; logic delay; nonbinary SAR ADC; nonbinary decision scheme; power 7.2 mW; reference fluctuations; size 45 nm; structure compact; successive approximation register; voltage 1.25 V; CMOS integrated circuits; Error correction; Noise; Prototypes; Redundancy; Registers; Switches; 2b/cycle SAR ADC; nonbinary SAR ADC;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2014.2364833
  • Filename
    6967867