Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design

Author

Farbiz, Farzan ; Appaswamy, A. ; Salman, Adnan Ahmed ; Boselli, G.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

2013

fDate

14-18 April 2013

Abstract

We report a new challenge to IEC protection of high-speed devices caused by current filamentation due to voltage-overshoot effects in forward-biased diodes. While well understood in reverse-biased junctions, filamentation has never been reported in forward-biased junctions, which are often used in high-speed designs such as USB3 and HDMI. An analytical model is presented to estimate the voltage overshoot as a function of rise-time and bias conditions to predict the trade-offs inherent in low-capacitance ESD diodes.

Keywords

electrostatic devices; electrostatic discharge; failure analysis; semiconductor diodes; HDMI; IEC protection; USB3; current filamentation; forward-biased diodes; forward-biased junctions; high-speed ESD design; high-speed devices; low-capacitance ESD diodes; overshoot-induced failures; reverse-biased junctions; voltage-overshoot effects; Analytical models; Capacitance; Conductivity; Electrostatic discharges; IEC; IEC standards; Junctions; Filamentation; High speed; IEC; Voltage overshoot;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531946

Filename

6531946