DocumentCode :
608128
Title :
A physics-based compact model for SCR devices used in ESD protection circuits
Author :
Mertens, Robert ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2013
fDate :
14-18 April 2013
Abstract :
A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
Keywords :
CMOS integrated circuits; bipolar transistors; electrostatic discharge; semiconductor device models; thyristors; CMOS SCR compact model; ESD protection circuits; SCR devices; coupled NPN transistors; coupled PNP transistors; physics-based compact model; Equations; Integrated circuit modeling; Mathematical model; Resistance; Resistors; Semiconductor device modeling; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6531947
Filename :
6531947
Link To Document :
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