Title :
Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics
Author :
Lee, M.H. ; Wei, Y.-T. ; Chu, K.-Y. ; Huang, J.-J. ; Chen, C.-W. ; Cheng, C.-C. ; Chen, M.-J. ; Lee, H.-Y. ; Chen, Y.-S. ; Lee, L.-H. ; Tsai, M.-J.
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
The antiferroelectricity in HfZrO2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.
Keywords :
antiferroelectricity; field effect transistors; hafnium compounds; low-power electronics; zirconium compounds; FET characteristics; HfZrO2; antiferroelectricity; coercive field; ferroelectric type; field effect transistors; low-power electronics; memory applications; near nonhysteresis; remanent polarization; steep slope; temperature 600 degC; Annealing; Capacitance; Field effect transistors; Hafnium compounds; Iron; Logic gates; Tin; Ferroelectric; capacitance; ferroelectric; negative capacitance; subthreshold swing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2402517
