DocumentCode
608141
Title
Reliability monitoring for highly leaky devices
Author
Ryan, J.T. ; Campbell, J.P. ; Cheung, K.P. ; Suehle, John S. ; Southwick, Richard G. ; Oates, Anthony S.
Author_Institution
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
2013
fDate
14-18 April 2013
Abstract
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals despite excessively high gate leakage current backgrounds. We demonstrate the utility of FMCP as a reliability monitoring tool in highly scaled and highly leaky devices.
Keywords
MOSFET; leakage currents; reliability; semiconductor device reliability; AC coupled measurement; CP methodology; FMCP; charge pumping methodology; frequency modulated CP; high gate leakage current; highly leaky devices; n-channel MOSFET; reliability monitoring tool; small CP signals; Current measurement; Frequency measurement; Frequency modulation; Iterative closest point algorithm; Leakage currents; Robustness; Stress; charge pumping; frequency modulation; leakage current;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6531960
Filename
6531960
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