Title :
Reliability monitoring for highly leaky devices
Author :
Ryan, J.T. ; Campbell, J.P. ; Cheung, K.P. ; Suehle, John S. ; Southwick, Richard G. ; Oates, Anthony S.
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals despite excessively high gate leakage current backgrounds. We demonstrate the utility of FMCP as a reliability monitoring tool in highly scaled and highly leaky devices.
Keywords :
MOSFET; leakage currents; reliability; semiconductor device reliability; AC coupled measurement; CP methodology; FMCP; charge pumping methodology; frequency modulated CP; high gate leakage current; highly leaky devices; n-channel MOSFET; reliability monitoring tool; small CP signals; Current measurement; Frequency measurement; Frequency modulation; Iterative closest point algorithm; Leakage currents; Robustness; Stress; charge pumping; frequency modulation; leakage current;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531960
