DocumentCode
608146
Title
Realistic 55nm IC failure in time (FIT) estimates from automotive field returns
Author
Haggag, A. ; Barr, A. ; Walker, Katherine ; Winemberg, LeRoy
Author_Institution
Freescale Semicond., Inc., Austin, TX, USA
fYear
2013
fDate
14-18 April 2013
Abstract
We have demonstrated that the raw failure rate from field data decreases much faster than any realistic statistical reliability model due to the artifact that we are also adding parts into the field as time passes. We have shown with a simple mathematical correction we can get real FIT that behaves as expected from realistic statistical reliability model. This methodology for hard failure rate estimation can also be applied for soft failure rate estimation using “NTF” or “No Trouble Found” field returns that are believed marginal parts. Since the next generation technology may be more sensitive to soft failures than the current generation, it is critical to get both hard and soft failure rate estimates, to allow design for reliability decisions.
Keywords
automotive electronics; failure analysis; integrated circuit modelling; integrated circuit reliability; statistical analysis; IC FIT estimates; IC failure in time estimates; NTF field; automotive field returns; field data; mathematical correction; no trouble found field; raw failure rate estimation; realistic statistical reliability model; reliability decisions; size 55 nm; soft failure rate estimation; Automotive engineering; Data models; Integrated circuits; Next generation networking; Reliability; Safety; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6531965
Filename
6531965
Link To Document