DocumentCode
608152
Title
Workload dependent NBTI and PBTI analysis for a sub-45nm commercial microprocessor
Author
Mintarno, E. ; Chandra, Vishal ; Pietromonaco, David ; Aitken, Robert ; Dutton, R.W.
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
14-18 April 2013
Abstract
This paper analyzes aging effects on various design hierarchies of a sub-45nm commercial processor running realistic applications. Dependencies of aging effects on switching-activity and power-state of workloads are quantified. This paper presents an “instance-based” simulation flow, which creates a standard-cell library for each use of the cell in the design, by aging each transistor individually. Implementation results show that processor timing degradation can vary from 2% to 11%, depending on workload. Lifetime computational power efficiency improvements of optimized self-tuning is demonstrated, relative to a one-time worst-case guardbanding approach.
Keywords
ageing; circuit simulation; circuit tuning; microprocessor chips; switching circuits; transistors; NBTI analysis; PBTI analysis; commercial microprocessor; instance-based simulation flow; lifetime computational power efficiency improvement; negative bias temperature instability; one-time worst-case guardbanding approach; positive bias temperature instability; power-state workload; self-tuning optimization; size 45 nm; standard-cell library; switching-activity effect; timing degradation; transistor aging; Aging; Degradation; Delays; Libraries; Logic gates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6531971
Filename
6531971
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