Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

Author

Gerrer, Louis ; Amoroso, Salvatore Maria ; Asenov, P. ; Ding, J. ; Cheng, Binjie ; Adamu-Lema, F. ; Markov, Stanislav ; Asenov, Asen ; Reid, Dave ; Millar, C. ; Asenov, Asen

Author_Institution

Device Modeling Group, Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

14-18 April 2013

Abstract

In this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived.

Keywords

MOSFET; Monte Carlo methods; circuit simulation; semiconductor device models; semiconductor device reliability; statistical analysis; BTI; MOSFET; RTN phenomenon; atomistic devices; atomistic simulations; circuit lifetime projections; detrapping dynamics; kinetic Monte-Carlo engine; oxide degradation simulations; reliability simulation framework; statistical reliability; statistical variability; transistor-to-circuit simulation technology; trapping dynamics; traps interactions; Degradation; Electron traps; Integrated circuit modeling; Integrated circuit reliability; Resource description framework; Stress; BTI degradation; atomistic simulation; compact modelling; oxide reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531972

Filename

6531972