• DocumentCode
    608170
  • Title

    Correlating low energy neutron SER with broad beam neutron and 200 MeV proton SER for 22nm CMOS Tri-Gate devices

  • Author

    Jahinuzzaman, S. ; Gill, Brijesh ; Ambrose, V. ; Seifert, N.

  • Author_Institution
    Logic Technol. Dev. Q&R, Intel Corp., Hillsboro, OR, USA
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    For terrestrial single event upset (SEU) characterization, JEDEC JESD89A requires using either broad beam neutron sources or at least four single neutron/proton particle energy sources. While computing ambient upset rates from broad beam neutron sources, such as the ICE House at Los Alamos Neutron Science Center (LANSCE), is simple and direct, their availability, cost, and particle fluxes are very limited. Several authors in the open literature therefore have considered alternatives, such as high energy (e.g., 200 MeV) proton beams or low energy (e.g., 14MeV) neutron beams. In this paper, we address the questions of accuracy and correlation when these alternative facilities are employed. SEU data were collected on 22nm Tri-Gate bulk CMOS devices at Boeing (BREL), Los Alamos (LANSCE/WNR) and IUCF (RERP and LENS) and the corresponding upset rates are compared.
  • Keywords
    CMOS integrated circuits; radiation hardening (electronics); BREL; Boeing; CMOS trigate devices; IUCF; JEDEC JESD89A; LANSCE-WNR; Los Alamos Neutron Science Center; SEU data; ambient upset rates; broad beam neutron sources; correlating low energy neutron SER; electron volt energy 200 MeV; proton SER; single neutron-proton particle energy sources; size 22 nm; terrestrial SEU characterization; terrestrial single event upset characterization; Latches; Lenses; Neutrons; Particle beams; Protons; Random access memory; Single event upsets; SER; Tri-Gate CMOS; accelerated testing; neutron; proton; single event upset; soft error;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6531989
  • Filename
    6531989