• DocumentCode
    608189
  • Title

    Impact of dynamic variability on SRAM functionality and performance in nano-scaled CMOS technologies

  • Author

    Subirats, Alexandre ; Garros, Xavier ; Mazurier, J. ; El Husseini, Joanna ; Rozeau, O. ; Reimbold, Gilles ; Faynot, O. ; Ghibaudo, Gerard

  • Author_Institution
    CEA-Leti, Grenoble, France
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    In this paper we demonstrate that fast oxide trapping mechanism can be responsible for significant dynamic variability of Vt, gm and Id at circuit operating conditions. An estimation of the effect of these variabilities has been made using Monte Carlo simulations. The impact of the measured variabilities on SRAM performance is found appreciable since a margin of ~50mV in the minimum supply voltages is required to overcome this effect.
  • Keywords
    CMOS memory circuits; Monte Carlo methods; SRAM chips; Monte Carlo simulations; SRAM functionality; SRAM performance; circuit operating conditions; dynamic variability; fast oxide trapping mechanism; minimum supply voltages; nanoscaled CMOS technologies; Charge carrier processes; Computer aided software engineering; Degradation; Gaussian distribution; MOS devices; Random access memory; Transistors; Circuit; MOSFETs; Reliability; SRAM; Variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532008
  • Filename
    6532008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=608189