Intrinsic transistor reliability improvements from 22nm tri-gate technology

Author

Ramey, S. ; Ashutosh, A. ; Auth, C. ; Clifford, J. ; Hattendorf, M. ; Hicks, J. ; James, Rob ; Rahman, Aminur ; Sharma, Vishal ; St.Amour, A. ; Wiegand, C.

Author_Institution

Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA

fYear

2013

fDate

14-18 April 2013

Abstract

This paper highlights the intrinsic reliability capabilities of Intel´s 22nm process technology, which introduced the tri-gate transistor architecture and features a 3^rd generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including BTI, TDDB, SILC, and HCI. In addition, characteristics unique to this transistor architecture and process technology are described.

Keywords

high-k dielectric thin films; semiconductor device reliability; transistors; 3rd generation high-κ-metal-gate process; BTI; HCI; Intel process technology; SILC; TDDB; intrinsic transistor reliability improvements; process technology; size 22 nm; transistor architecture; trigate technology; Degradation; Integrated circuit reliability; Logic gates; MOS devices; Optimization; Transistors; BTI; FinFET; HCI; TDDB; reliability; tri-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532017

Filename

6532017