Title :
Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography
Author :
Schmidt, Christoph ; Wadhwa, K. ; Reverdy, A. ; Reinders, E.
Author_Institution :
Syst. & Applic. Dev. Microelectron., DCG Syst. GmbH, Erlangen, Germany
Abstract :
Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.
Keywords :
crystal defects; failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; nondestructive testing; system-in-package; LIT; SiP; electrical active defect localization; lock-in thermography; reliability-related failure mechanism; system in packages; Failure analysis; Imaging; Integrated circuits; Performance evaluation; Reliability; Resistance; Surfaces;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532027
