DocumentCode
608208
Title
Localization of electrical active defects caused by reliability-related failure mechanism by the application of Lock-in Thermography
Author
Schmidt, Christoph ; Wadhwa, K. ; Reverdy, A. ; Reinders, E.
Author_Institution
Syst. & Applic. Dev. Microelectron., DCG Syst. GmbH, Erlangen, Germany
fYear
2013
fDate
14-18 April 2013
Abstract
Within this paper, the method of Lock-in Thermography (LIT) is presented and introduced as an useful method for localizing electrical active defects caused by reliability-related failure mechanism. After a short introduction of the physical principle, several case studies are presented.
Keywords
crystal defects; failure analysis; infrared imaging; integrated circuit reliability; integrated circuit testing; nondestructive testing; system-in-package; LIT; SiP; electrical active defect localization; lock-in thermography; reliability-related failure mechanism; system in packages; Failure analysis; Imaging; Integrated circuits; Performance evaluation; Reliability; Resistance; Surfaces;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532027
Filename
6532027
Link To Document