DocumentCode
608235
Title
Impact of parasitic bipolar action and soft-error trend in bulk CMOS at terrestrial environment
Author
Uemura, Toshifumi ; Kato, Toshihiko ; Matsuyama, Hiroki
Author_Institution
Fujitsu Semicond. Ltd., Tokyo, Japan
fYear
2013
fDate
14-18 April 2013
Abstract
We investigate an impact of parasitic bipolar action on 28nm sequential elements in the terrestrial environment through spallation neutron beam irradiation tests. We discuss the contribution of parasitic bipolar action to the technology trend of SER through neutron tests on Flip-Flops and SRAMs.
Keywords
CMOS logic circuits; CMOS memory circuits; SRAM chips; flip-flops; integrated circuit testing; logic testing; neutron beams; radiation hardening (electronics); SER technology; SRAM; bulk CMOS; flip-flops; parasitic bipolar action; parasitic bipolar action contribution; sequential elements; soft-error trend; spallation neutron beam irradiation tests; terrestrial environment; Latches; Layout; Market research; Neutrons; Particle beams; Radiation effects; Random access memory; Alpha; Flip-Flop; Latch; Neutron; Sequential element; Single event upset; parasitic bipolar action;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532054
Filename
6532054
Link To Document