Universal properties and compact modeling of dynamic hot-electron degradation in n-MOSFETs

A compact model for the n-MOSFET degradation is developed based on the trap-density increase, which is extracted from the measured 1/f noise characteristics. The trap density is explicitly included in the Poisson equation, which is solved within the framework of HiSIM. The measured real-time dynamic degradation of the I-V characteristics is successfully reproduced with this compact modeling approach. A further important advantage of the developed compact degradation model is the negligible cost in additional circuit-simulation time.