Title :
New insight on high-k/metal gate reliability modeling for providing guidelines for process development
Author :
Rafik, M. ; Ribes, G. ; Mora, P. ; Blonkowski, S. ; Federspiel, Xavier ; Caubet, P. ; Gaumer, C. ; Grosjean, M. ; Roy, Didier
Author_Institution :
STMicroelectron., Monnet, France
Abstract :
Process changes with the view of improving performances should not be done at the expense of reliability. In this respect, degradation mechanisms modeling must provide guidelines for process orientations. In this paper, NBTI and TDDB physical mechanisms are discussed together with the process levers for the control of reliability.
Keywords :
electric breakdown; high-k dielectric thin films; negative bias temperature instability; NBTI physical mechanism; TDDB physical mechanism; high-k-metal gate reliability; negative bias temperature instability; process development; process orientations; time dependent dielectric breakdown; Degradation; Dielectrics; High K dielectric materials; Logic gates; MOS devices; Reliability; Tin;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532085
