DocumentCode
608266
Title
New insight on high-k/metal gate reliability modeling for providing guidelines for process development
Author
Rafik, M. ; Ribes, G. ; Mora, P. ; Blonkowski, S. ; Federspiel, Xavier ; Caubet, P. ; Gaumer, C. ; Grosjean, M. ; Roy, Didier
Author_Institution
STMicroelectron., Monnet, France
fYear
2013
fDate
14-18 April 2013
Abstract
Process changes with the view of improving performances should not be done at the expense of reliability. In this respect, degradation mechanisms modeling must provide guidelines for process orientations. In this paper, NBTI and TDDB physical mechanisms are discussed together with the process levers for the control of reliability.
Keywords
electric breakdown; high-k dielectric thin films; negative bias temperature instability; NBTI physical mechanism; TDDB physical mechanism; high-k-metal gate reliability; negative bias temperature instability; process development; process orientations; time dependent dielectric breakdown; Degradation; Dielectrics; High K dielectric materials; Logic gates; MOS devices; Reliability; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532085
Filename
6532085
Link To Document