Title :
Estimating the detection stability of a Si nanowire sensor using an additional charging electrode
Author :
Min-Cheng Chen ; Hsiao-Chien Chen ; Ta-Hsien Lee ; Yu-Hsien Lin ; Jyun-Hung Shih ; Bo-Wei Wang ; Yun-Fang Hou ; Yi-Ju Chen ; Chia-Yi Lin ; Chang-Hsien Lin ; Yi-Ping Hsieh ; ChiaHua Ho ; Mu-Yi Hua ; Jian-Tai Qiu ; Tahui Wang ; Fu-Liang Yang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
This paper proposes a sensing stability estimation method that involves using an additional forcing electrode to simulate the surface charge coupling effect for bottom gate nanowire sensors. The alteration of the Si nanowire can be observed by using the charging electrode without any complex surface treatment and micro-channel setup. The nanowire sensor has a distinct charge-sensitive slope (Vth shift > 60 mV/10-16C) with a wire-width scaling of 35 nm. The proposed estimation technique simplifies the charge sensing operation.
Keywords :
electrochemical electrodes; elemental semiconductors; nanosensors; nanowires; silicon; Si; Si nanowire sensor; bottom gate nanowire sensors; charge-sensitive slope; charging electrode; detection stability; forcing electrode; size 35 nm; stability estimation method; surface charge coupling effect; wire-width scaling; Electrodes; Logic gates; Nanobioscience; Nanoscale devices; Sensors; Silicon; Surface treatment; Charge coupling effect; dection stability; nanosensor fabrication; nanowire FET; semiconductive sensors;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532089
