DocumentCode
608271
Title
Morphological analysis of GaN membranes obtained by micromachining of GaN/Si
Author
Cismaru, A. ; Muller, A. ; Comanescu, F. ; Purica, Munizer ; Stefanescu, A. ; Dinescu, Adrian ; Konstantinidis, G. ; Stavrinidis, A.
Author_Institution
IMT, Bucharest, Romania
fYear
2013
fDate
14-18 April 2013
Abstract
The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices´ electrical performances, is possible without affecting their reliability.
Keywords
III-V semiconductors; bulk acoustic wave devices; gallium compounds; membranes; micromachining; micromechanical resonators; photodetectors; reliability; wide band gap semiconductors; FBAR; GaN-Si; backside-illuminated UV photodetectors; membranes; micromachining; morphological analysis; reliability; Film bulk acoustic resonators; Gallium nitride; III-V semiconductor materials; Metallization; Resonant frequency; Silicon; Stress; FBAR; GaN membranes; Raman spectroscopy; WLI; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532090
Filename
6532090
Link To Document