• DocumentCode
    608271
  • Title

    Morphological analysis of GaN membranes obtained by micromachining of GaN/Si

  • Author

    Cismaru, A. ; Muller, A. ; Comanescu, F. ; Purica, Munizer ; Stefanescu, A. ; Dinescu, Adrian ; Konstantinidis, G. ; Stavrinidis, A.

  • Author_Institution
    IMT, Bucharest, Romania
  • fYear
    2013
  • fDate
    14-18 April 2013
  • Abstract
    The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane, further reducing of membrane thickness, to improve devices´ electrical performances, is possible without affecting their reliability.
  • Keywords
    III-V semiconductors; bulk acoustic wave devices; gallium compounds; membranes; micromachining; micromechanical resonators; photodetectors; reliability; wide band gap semiconductors; FBAR; GaN-Si; backside-illuminated UV photodetectors; membranes; micromachining; morphological analysis; reliability; Film bulk acoustic resonators; Gallium nitride; III-V semiconductor materials; Metallization; Resonant frequency; Silicon; Stress; FBAR; GaN membranes; Raman spectroscopy; WLI; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2013 IEEE International
  • Conference_Location
    Anaheim, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4799-0112-8
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2013.6532090
  • Filename
    6532090